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| ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V : RDS(on)=0.15 ; ID=2A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT23 package SOT23 APPLICATIONS * DC-DC Converters * Power Management functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE ZXMN3B01FTA ZXMN3B01FTC REEL SIZE 7" 13" TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units PINOUT DEVICE MARKING * 3B1 TOP VIEW ISSUE 1 - DECEMBER 2005 1 ZXMN3B01F ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ V GS =4.5V; T A =25C (b) @ V GS =4.5V; T A =70C (b) @ V GS =4.5V; T A =25C (a) Pulsed Drain Current (c) SYMBOL V DSS V GS ID LIMIT 30 12 2.0 1.6 1.7 UNIT V V A A A A A A mW mW/C mW mW/C C I DM IS I SM PD PD T j , T stg 9.4 1.3 9.4 625 5 806 6.4 -55 to +150 Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25C (a) Linear Derating Factor Power Dissipation at T A =25C Linear Derating Factor Operating and Storage Temperature Range (b) THERMAL RESISTANCE PARAMETER Junction to Ambient (a) SYMBOL R JA R JA VALUE 200 155 UNIT C/W C/W Junction to Ambient (b) NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. ISSUE 1 - DECEMBER 2005 SEMICONDUCTORS 2 ZXMN3B01F TYPICAL CHARACTERISTICS ISSUE 1 - DECEMBER 2005 3 SEMICONDUCTORS ZXMN3B01F ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (1) (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) V SD t rr Q rr 0.85 10.85 5 0.95 V ns NC T J =25C, I S = 1.7A, V GS =0V T J =25C, I F = 1.3A, di/dt= 100A/ s t d(on) tr t d(off) tf Qg Q gs Q gd 2.69 3.98 8 5.27 2.93 0.57 0.92 ns ns ns ns nC nC nC V DS =15V,V GS = 4.5V, I D =1.7A C iss C oss C rss 258 50 30 pF pF pF V DS = 15V, V GS =0V, f=1MHz (1) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 30 1 100 0.7 0.150 0.240 4 V A nA V I D =250 A, V GS =0V V DS =30V, V GS =0V V GS = 12V, V DS =0V I =250 A, V DS = V GS D V GS =4.5V, I D =1.7A V GS =2.5V, I D =1.2A V DS =15V,I D =1.7A S V DD = 15V, V GS = 4.5V I D = 1A R G 6.0 NOTES (1) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - DECEMBER 2005 SEMICONDUCTORS 4 ZXMN3B01F CHARACTERISTICS ISSUE 1 - DECEMBER 2005 5 SEMICONDUCTORS ZXMN3B01F TYPICAL CHARACTERISTICS Current regulator QG 12V 50k Same as D.U.T VG QGS QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% VGS RG RD VDS VCC 10% VGS td(on) t(on) tr td(off) t(on) tr Switching time waveforms Switching time test circuit ISSUE 1 - DECEMBER 2005 SEMICONDUCTORS 6 ZXMN3B01F PACKAGE OUTLINE PAD LAYOUT Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS MILLIMETERS DIM A B C D F G 0.37 0.085 MIN 2.67 1.20 MAX 3.05 1.40 1.10 0.53 0.15 0.015 0.0034 INCHES MIN 0.105 0.047 MAX 0.120 0.055 0.043 0.021 0.0059 DIM H K L M N MILLIMETERS MIN 0.33 0.01 2.10 0.45 MAX 0.51 0.10 2.50 0.64 INCHES MIN 0.013 0.0004 0.083 0.018 MAX 0.020 0.004 0.0985 0.025 0.95 NOM 10 TYP 0.0375 NOM 10 TYP 1.90 NOM 0.075 NOM (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - DECEMBER 2005 7 SEMICONDUCTORS |
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